A novel approach to quantum point contact for post soft breakdown conduction

Author

Cester, A. ; Bandiera, L. ; Sune, J. ; Boschiero, L. ; Ghidini, G. ; Paccagnella, A.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

fYear

2001

fDate

2-5 Dec. 2001

Abstract

A new approach based on quantum point contact (QPC) is presented to describe the electrical characteristics of soft breakdown in electrically stressed MOS capacitors. By using the new analytical model it is possible to extrapolate the barrier profile of the SB spot from experimental Ig-Vg curves. Barrier height and width are the two representative parameters of the barrier. Results obtained for a variety of oxide thickness and gate areas show that the SB current can be controlled either by the barrier width or barrier height depending on the leakage intensity.

Keywords

MOS capacitors; MOSFET; leakage currents; point contacts; semiconductor device breakdown; semiconductor device models; Ig-Vg curves; MOSFET; analytical model; barrier height; barrier profile; barrier width; electrical characteristics; electrically stressed MOS capacitors; gate areas; leakage intensity; oxide thickness; post soft breakdown conduction; quantum point contact; Anodes; CMOS technology; Cathodes; Contacts; Electric breakdown; Electric variables; Electrons; Energy barrier; MOS capacitors; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979490

Filename

979490