New development trends for silicon RF device technologies

Author

Camilleri, N. ; Lovelace, D. ; Costa, J. ; Ngo, D.

Author_Institution

Adv. Technol. Center, Motorola Inc., Mesa, AZ, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

5

Lastpage

8

Abstract

Today more than ever, low cost, high performance RF devices are in high demand due to explosive growth in the wireless communications business. As the RF performance of silicon-based technologies improve, silicon solutions are an obvious choice due to its low cost, high reliability and the ability to integrate other analog and logic functions on-chip. This paper will highlight some of the development efforts that are taking place to improve silicon device technologies for RF and microwave applications. Performance of current state-of-the-art silicon bipolar, MOSFET, TFSOI and SiGe HBTs will be discussed.<>

Keywords

elemental semiconductors; semiconductor technology; silicon; solid-state microwave devices; HBTs; MOSFET; RF applications; Si; TFSOI; analog functions; bipolar transistors; cost; logic functions; microwave applications; on-chip integration; reliability; silicon RF device technologies; wireless communications; Business communication; Cost function; Explosives; Logic functions; MOSFET circuits; Microwave devices; Microwave technology; Radio frequency; Silicon devices; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332126

Filename

332126