Optimum design of distributed power-FET amplifiers. Application to a 2-18 GHz MMIC module exhibiting improved power performances

Author

Campovecchio, M. ; Le Bras, B. ; Lajugie, M. ; Obregon, J.

Author_Institution

Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France

fYear

1994

fDate

22-25 May 1994

Firstpage

125

Lastpage

128

Abstract

A suitable and effective design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. An analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best trade-offs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operation.<>

Keywords

MMIC; equivalent circuits; field effect integrated circuits; impedance matching; microwave amplifiers; modules; power amplifiers; power integrated circuits; 14.2 percent; 2 to 18 GHz; 26.5 percent; CW operation; MMIC amplifier; MMIC module; distributed power-FET amplifiers; high power operation; optimum design; wideband operation; Design methodology; Distributed amplifiers; FETs; Foundries; Instruments; MMICs; Manufacturing; Operational amplifiers; Power amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332128

Filename

332128