High-speed SiGe:C bipolar technology

Author

Bock, J. ; Schafer, H. ; Knapp, H. ; Zoschg, D. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Stengl, R. ; Schreiter, R. ; Meister, T.F.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2001

fDate

2-5 Dec. 2001

Abstract

A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.

Keywords

Ge-Si alloys; bipolar MMIC; bipolar analogue integrated circuits; bipolar digital integrated circuits; carbon; high-speed integrated circuits; integrated circuit technology; low-power electronics; semiconductor materials; 106 GHz; 145 GHz; 2.3 V; 6.5 ps; SiGe:C; analog circuits; digital circuits; double-polysilicon self-aligned transistor; high-speed SiGe:C bipolar technology; high-speed circuits; low-power circuits; narrow base; transistor performance; Boron; Circuits; Delay; Doping profiles; Epitaxial growth; Fabrication; Frequency; Germanium silicon alloys; Laser radar; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979508

Filename

979508