High-efficiency X-band HBT power amplifier

Author

Khatibzadeh, A. ; Liu, W. ; Henderson, T. ; Sweder, J. ; Pierce, S.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

117

Lastpage

120

Abstract

We report on the state-of-the-art performance of monolithic HBT amplifiers at X-band. Single-chip, two-stage amplifiers have been designed and fabricated using AlGaAs/GaAs HBT process. An output power level of 12.5 W, with 51% power-added efficiency and 13 dB associated gain have been achieved at 8.5 GHz. The amplifier delivers more than 10 W output power with minimum 41% PAE in the 8.3-9.5 GHz band, and 9 W power with minimum 38% PAE in the 8.3-10.0 GHz band. The amplifier measures 4.5/spl times/4.5 mm/sup 2/ in size and is thermally ballasted for reliable operation. To our knowledge, these results represent state-of-the-art performance in terms of the combination of power, bandwidth, and efficiency for any monolithic solid-state amplifier technology.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; power amplifiers; 12.5 W; 51 percent; 8.5 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT process; HBT power amplifier; X-band; output power level; power-added efficiency; solid-state amplifier technology; thermally ballasted; two-stage amplifiers; Bandwidth; Electronic ballasts; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Operational amplifiers; Power amplifiers; Power generation; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332130

Filename

332130