GaAs varactor tuned filter for low power applications

Author

Eriksson, A. ; Deleniv, A. ; Gevorgian, S. ; Lumetzberger, B. ; Billström, N.

Author_Institution

Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2005

fDate

12-17 June 2005

Abstract

A five-pole varactor-tuned filter with a 5% pass-band operating at 1.9 GHz is proposed. The tunability is realized by reverse-biased GaAs diodes loading the resonators, which are formed by a section of multicoupled microstrip lines. A measured center frequency shift of 200 MHz (10% tunability) was made at 22 V DC bias. The insertion loss varies in the range of 6-4.5 dB, while matching is better than 12 dB. The output IP3 range is -1.6 dBm at the lowest bias, increasing to 24 dBm at the highest bias voltage, and the temperature stability is about 1.8% (from -50° to 125°C) at 1 V and 0.5% at 10 V.

Keywords

III-V semiconductors; UHF filters; band-pass filters; gallium arsenide; low-power electronics; microstrip lines; microstrip resonators; varactors; 1 V; 1.9 GHz; 10 V; 200 MHz; 22 V; 6 to 4.5 dB; GaAs; five-pole varactor-tuned filter; insertion loss; low power applications; multicoupled microstrip lines; pass band filters; reverse-biased diodes; temperature stability; tunable filters; Diodes; Frequency measurement; Gallium arsenide; Insertion loss; Microstrip resonators; Power filters; Resonator filters; Temperature distribution; Varactors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517191

Filename

1517191