Bias-dependent performance of high-power AlGaN/GaN HEMTs

Author

Wu, Y.-F. ; Chavarkar, P.M. ; Moore, M. ; Parikh, P. ; Mishra, U.K.

Author_Institution

Cree Lighting Co., Goleta, CA, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Large-signal behavior with a fixed load and varying supply voltages was proposed for characterizing the quality of AlGaN/GaN HEMTs. Improved devices demonstrated constantly high PAEs of 56-62% at 8 GHz throughout a wide voltage range from 10 to 40 V. These 300-/spl mu/m-wide devices also generated 3.1-W output power with only 3.4-dB gain compression at 45 V, which translates to 10.3-W/mm power density; the highest for any FET of the same size.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; wide band gap semiconductors; 10 to 40 V; 3.1 W; 300 micron; 45 V; 56 to 62 percent; 8 GHz; AlGaN-GaN; bias-dependent performance; fixed load; gain compression; high PAEs; high-power AlGaN/GaN HEMTs; large-signal behavior; microwave power applications; output power; power density; varying supply voltages; wide voltage range; Aluminum gallium nitride; Gallium nitride; HEMTs; High power microwave generation; Impedance; MODFETs; Microwave FETs; Microwave transistors; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979515

Filename

979515