A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s

Author

Wolf, G. ; Happy, H. ; Demichel, S. ; Leblanc, R. ; Blache, F. ; Lefèvre, R. ; Dambrine, G.

Author_Institution

Departement Hyperfrequences et Semiconducteurs, Inst. d´´Electronique de Microelectronique et de Nanotechnologie, Villeneuve D Ascq, France

fYear

2005

fDate

12-17 June 2005

Abstract

An eight stage distributed amplifier with 12.5 dB ± 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 μm metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is ± 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit optimisation; distributed amplifiers; gallium arsenide; integrated circuit design; low noise amplifiers; millimetre wave amplifiers; optical receivers; photodiodes; 0.1 micron; 0.4 W; 40 Gbit/s; 50 GHz; 9 to 40 GHz; GaAs; MHEMT technology; eye diagrams measurements; fiber optic communication; fiber pig-tailed module; group delay variation; high responsivity photodiode; high-speed photoreceiver operation; low noise amplifiers; metamorphic HEMT distributed amplifier; microstrip circuits; Bandwidth; Circuits; Delay; Distributed amplifiers; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; Noise figure; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517196

Filename

1517196