DocumentCode
2166107
Title
Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET
Author
Daun, F.L. ; Ioannou, D.E.
Author_Institution
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fYear
1997
fDate
6-9 Oct 1997
Firstpage
100
Lastpage
101
Abstract
In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is better than the inversion mode device, and its breakdown voltage higher than the accumulation mode device. Additionally, the new device results in better hot carrier reliability
Keywords
MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; breakdown voltage; hot carrier reliability; mixed accumulation/inversion mode fully-depleted SOI MOSFET; Application software; Doping; Electric breakdown; Hot carriers; MOSFET circuits; Power engineering and energy; Power engineering computing; Silicon; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location
Fish Camp, CA
ISSN
1078-621X
Print_ISBN
0-7803-3938-X
Type
conf
DOI
10.1109/SOI.1997.634952
Filename
634952
Link To Document