DocumentCode
2166158
Title
Unconditional Stabilization of CS and CG MESFET Transistor
Author
Hammad, Hany F. ; Freundorfer, Alois P. ; Antar, Yahia M M
Author_Institution
Electrical and Computer Engineering Department, Queen´´s University, Kingston Ontario, Canada, hammadh@ee.queensu.ca
fYear
2001
fDate
24-26 Sept. 2001
Firstpage
1
Lastpage
4
Abstract
Feedback is used to achieve multi-band unconditional stability for GaAs MESFET transistor. Analytical formulation based on evaluating the stability parameters as a function of the transistor model elements is provided, with two methods to accurately estimate the feedback values needed for all-band unconditional stability. The technique is applied to common source and common gate configurations. Both were monolithically fabricated and tested, and very good agreement between the predicted and measured results is obtained.
Keywords
Admittance; Character generation; Equations; Feedback; Frequency; MESFETs; Military computing; Performance gain; Scattering parameters; Stability analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. 31st European
Conference_Location
London, England
Type
conf
DOI
10.1109/EUMA.2001.339135
Filename
4140203
Link To Document