High efficiency, low adjacent channel leakage GaAs power MMIC for digital cordless telephone

Author

Kunihisa, T. ; Yokoyama, T. ; Fujimoto, H. ; Ishida, K. ; Takehara, H. ; Ishikawa, O.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1994

fDate

22-25 May 1994

Firstpage

55

Lastpage

58

Abstract

This paper presents the high efficiency, low spectrum distortion surface mount plastic packaged GaAs power MMIC for 1.9 GHz band Japanese digital cordless telephone. Two power MESFETs and input, interstage and output matching circuits are integrated in very small single chip of 1.0 mm/spl times/1.5 mm. The power MMIC achieves high power added efficiency (PAE) of 40.5% with low adjacent channel leakage power (Padj) of -56 dBc at Pout=22 dBm under low operating voltage of 3.0 V.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; cordless telephone systems; digital radio systems; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; power integrated circuits; power transistors; surface mount technology; ultra-high-frequency amplifiers; 1.9 GHz; 3 V; 40.5 percent; GaAs; GaAs power MMIC; SMD; UHF IC; digital cordless telephone; high efficiency; low adjacent channel leakage; low spectrum distortion; output matching circuits; power MESFETs; surface mount plastic packaged MMIC; Batteries; Gallium arsenide; High power amplifiers; Lithium; Low voltage; MESFETs; MMICs; Plastic packaging; Telephone sets; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332143

Filename

332143