Dynamic Large-Signal I-V Analysis and Non-Linear Modelling of Algan/Gan HEMTS

Author

Chigaeva, E. ; Wieser, N. ; Walthes, W. ; Grozing, M. ; Berroth, M. ; Roll, H. ; Breitschadel, O. ; Off, J. ; Kuhn, B. ; Scholz, F. ; Schweizer, H.

Author_Institution

Institute of Electrical and Optical Communication Engineering, University of Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany, Tel.: +49 711 685 7912, Fax: +49 711 685 7900

fYear

2001

fDate

24-26 Sept. 2001

Firstpage

1

Lastpage

4

Abstract

For AlGaN/GaN high electron mobility transistors (HEMTs), the voltage and current waveforms at CW large-signal operation at 5 GHz have been reconstructed from experimental magnitude and phase information on fundamental and higher harmonics of transmitted and reflected signals. To compare with the DC behaviour, the clipped waveforms have accurately been analysed to recover the dynamic output characteristics in view of dispersion effects related to self-heating. In conjunction with small-signal S-parameter data, the large-signal experimental results have been used in an attempt to apply a HEMT large-signal model, showing satisfactory agreement of simulated and measured characteristics at least in regions where self-heating is not much pronounced.

Keywords

Aluminum gallium nitride; Dispersion; Gallium nitride; HEMTs; Harmonic analysis; Information analysis; MODFETs; Radio frequency; Signal analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. 31st European

Conference_Location

London, England

Type

conf

DOI

10.1109/EUMA.2001.339141

Filename

4140209