Compact high gain W-band and V-band pseudomorphic HEMT MMIC power amplifiers

Author

Duncan, S.W. ; Eskandarian, A. ; Gill, D. ; Golja, B. ; Power, B. ; Tu, D.W. ; Svensson, S. ; Weinreb, S. ; Zimmerman, M. ; Byer, N.

Author_Institution

Martin Marietta Labs., Baltimore, MD, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

33

Lastpage

36

Abstract

A monolithic, three-stage W-band power amplifier, developed using pseudomorphic HEMTs, has exhibited record gain, power per unit gate width, and power per unit area. The amplifier has a small signal gain of 22-dB and an output power of 37-mW with an associated gain of 10-dB. A three-stage V-band power amplifier with record gain and power per unit area has also been fabricated on the same wafer with a small signal gain of 16-dB and an output power of 112-mW with an associated gain of 8-dB.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; power amplifiers; 112 mW; 37 mW; 8 to 22 dB; EHF; MIMIC; MM-wave ICs; MMIC power amplifiers; V-band; W-band; compact high gain type; monolithic three-stage amplifier; pseudomorphic HEMT; Circuit synthesis; Costs; Coupling circuits; Design optimization; High power amplifiers; Integrated circuit yield; MMICs; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332148

Filename

332148