• DocumentCode
    2166516
  • Title

    The temperature dependence of time-averaged hole drift mobility in As2S3 derived from PA measurements

  • Author

    Andriesh, A.M. ; Culeac, I.P. ; Ewen, P.J.S. ; Owen, A.E.

  • Author_Institution
    Center of Optoelectron, Inst. of Appl. Phys., Chisinau, Moldova
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    45
  • Abstract
    The time-averaged hole drift mobility in As2S3 glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10-10 cm2/V sec at 300 K and almost temperature independent below ~130 K
  • Keywords
    arsenic compounds; chalcogenide glasses; hole mobility; light absorption; 77 to 330 K; As2S3; As2S3 glass; PA measurement; steady-state photoinduced absorption; temperature dependence; thermal activation; time-averaged hole drift mobility; Absorption; Charge carrier processes; Electron traps; Glass; Kinetic energy; Photonic band gap; Probes; Spontaneous emission; Steady-state; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651545
  • Filename
    651545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2166516