• DocumentCode
    2166540
  • Title

    Hydrogen implantation in polycrystalline ZnO thin films

  • Author

    Bogatu, V. ; Goldenblum, A. ; Logonfatu, B.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    49
  • Abstract
    The paper presents the first results obtained on the hydrogen ion implantation in polycrystalline ZnO thin films. The ion implantation was carried out with a Kaufman type ion source. The results obtained after the experimental determination of the penetration depth are very close to the ones computed on the basis of the usual theory for monocrystals
  • Keywords
    II-VI semiconductors; hydrogen; ion implantation; semiconductor thin films; zinc compounds; Kaufman type ion source; ZnO:H; hydrogen ion implantation; penetration depth; polycrystalline ZnO thin film; Acceleration; Hydrogen; Ion beams; Ion implantation; Ion sources; Optical films; Plasma immersion ion implantation; Sputtering; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651546
  • Filename
    651546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2166540