DocumentCode
2166650
Title
HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport
Author
Zhu, W. ; Ma, T.P. ; Tamagawa, T. ; Di, Y. ; Kim, J. ; Carruthers, R. ; Gibson, M. ; Furukawa, T.
Author_Institution
Yale Univ., New Haven, CT, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
This paper reports the thermal stability of HfO/sub 2/ with/without Al inclusion (based on XRD and leakage current data), and energy band diagrams for metal/HfO/sub 2//Si structures as well as associated current transport mechanisms (based on gate current characteristics at various temperatures).
Keywords
CMOS integrated circuits; MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; leakage currents; thermal stability; Al inclusion; HfAlO; HfO/sub 2/-Si; XRD; current transport mechanisms; energy band diagrams; gate current characteristics; leakage current data; metal/HfO/sub 2//Si structures; thermal stability; CMOS technology; Crystallization; Hafnium oxide; High-K gate dielectrics; Leakage current; MOS capacitors; MOSFETs; Temperature; Thermal stability; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979541
Filename
979541
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