Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

Author

Huicai Zhong ; Shin-Nam Hong ; You-Seok Suh ; Lazar, H. ; Heuss, G. ; Misra, V.

Author_Institution

Dept. of Electr. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

This paper describes the characteristics of binary metallic alloys of Ta and Ru for gate electrode applications. The work function of this alloy can be varied from 4.2 eV to 5.2 eV by controlling the composition thereby enabling its use in both NMOS and PMOS devices. Excellent thermal stability up to 1000/spl deg/C was observed in alloy compositions suitable for both NMOS and PMOS devices. It is believed that the Ru/sub 1/Ta/sub 1/ phase of the film and formation of Ru-Ta bonds improves the thermal stability of the gate-dielectric interface while maintaining appropriate work functions.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit metallisation; metal-insulator boundaries; ruthenium alloys; semiconductor device metallisation; silicon; tantalum alloys; thermal stability; work function; 4.2 to 5.2 eV; Ru-Ta alloys; Ru-Ta bonds; RuTa; Si; Si NMOS devices; Si PMOS devices; alloy compositions; binary metallic alloys; gate electrode applications; gate-dielectric interface; thermal stability; work function; Capacitance-voltage characteristics; Dielectrics; Electrodes; MOS devices; Rapid thermal annealing; Silicon alloys; Silicon devices; Sputtering; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979543

Filename

979543