Device simulation of generation-recombination noise under periodic large-signal conditions

Author

Sanchez, J.E. ; Bosman, G. ; Law, M.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

The modulation of flicker (1/f or 1/f-like) noise is an important topic for RF communications, as it contributes to the stability of oscillators and the signal-to-noise ratio in mixers. For the first time, simulation results for trap-assisted generation-recombination (GR) noise under large-signal conditions are demonstrated for both a homogeneous resistor and a p/sup +/-n junction in a semiconductor device simulator using the harmonic balance and impedance field methods. It is believed that GR fluctuations are one mechanism which contributes to 1/f-like noise observed in semiconductor devices.

Keywords

1/f noise; flicker noise; semiconductor device models; semiconductor device noise; simulation; 1/f noise modulation; 1/f-like noise; GR fluctuations; flicker noise; generation-recombination noise; harmonic balance methods; homogeneous resistor; impedance field methods; p/sup +/-n junction; periodic large-signal conditions; semiconductor device simulator; trap-assisted GR noise; 1f noise; Impedance; Noise generators; Oscillators; Radio frequency; Resistors; Semiconductor device noise; Semiconductor devices; Signal to noise ratio; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979549

Filename

979549