Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters

Author

Jungemann, C. ; Neinhus, B. ; Decker, S. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotechnik und Mikroelektron., Bremen Univ., Germany

fYear

2001

fDate

2-5 Dec. 2001

Abstract

2D RF noise models based on Langevin-type drift-diffusion (DD) and hydrodynamic (HD) models for Si and SiGe devices are presented, where all transport and noise parameters are generated by full-band Monte Carlo (MC) bulk simulations. The DD and HD model are validated by comparison with MC device simulations. It is shown that the usual approach based on the DD model in conjunction with the Einstein relation fails under nonequilibrium conditions. Considering the full-band structure a remarkably strong dependence of noise on crystal orientation is found.

Keywords

Ge-Si alloys; Monte Carlo methods; current fluctuations; elemental semiconductors; semiconductor device models; semiconductor device noise; semiconductor materials; silicon; simulation; 2D RF noise models; Langevin-type drift-diffusion models; Monte Carlo device simulations; Si; Si devices; SiGe; SiGe devices; crystal orientation; full-band Monte Carlo bulk simulations; hierarchical 2D RF noise simulation; hydrodynamic models; noise parameters; nonequilibrium conditions; transport parameters; Current density; Germanium silicon alloys; High definition video; Hydrodynamics; Low-frequency noise; Monte Carlo methods; Noise generators; Poisson equations; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979550

Filename

979550