A 107 GHz 55 dB-Ohm InP Broadband Transimpedance Amplifier IC for High-Speed Optical Communication Links

Author

Bloch, Eli ; Hyun-Chul Park ; Griffith, Zach ; Urteaga, M. ; Ritter, Daniel ; Rodwell, Mark J. W.

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

We report a 107 GHz baseband differential transimpedance amplifier IC for high speed optical communication links. The amplifier, comprised of two Darlington resistive feedback stages, was implemented in a 500 nm InP HBT process and demonstrates 55 dBΩ differential transimpedance gain, 30 ps group delay, P1dB = 1 dBm, and is powered by a 5.2 V supply. Differential input and output impedances are 50Ω. The IC interfaces to -2V DC at the input for connections to high-speed photodiodes and -450 mV DC at the output for interfaces to Gilbert-cell mixers and to ECL logic.

Keywords

III-V semiconductors; bipolar integrated circuits; differential amplifiers; emitter-coupled logic; feedback amplifiers; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; operational amplifiers; optical communication equipment; Darlington resistive feedback stage; ECL logic; Gilbert cell mixer; HBT process; InP; bandwidth 107 GHz; broadband transimpedance amplifier IC; differential transimpedance amplifier IC; high speed photodiode; high-speed optical communication links; integrated circuit; size 500 nm; voltage -2 V; voltage 450 mV; voltage 5.2 V; Gain; Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Optical amplifiers; Optical fiber communication; Optical receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659184

Filename

6659184