Title :
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
Author :
Greenberg, D. ; Sweeney, S. ; LaMothe, C. ; Jenkins, K. ; Friedman, D. ; Martin, B., Jr. ; Freeman, G. ; Ahlgren, D. ; Subbanna, S. ; Joseph, A.
Author_Institution :
Microelectron. Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
Noise and isolation play a crucial role in the design and integration of telecommunications circuits. This work explores noise considerations for integrated design, including NPN and CMOS broadband and 1/f noise and the efficacy of available isolation strategies. We illustrate these issues using new data from IBM´s 120 GHz, 0.18 /spl mu/m SiGe BiCMOS, featuring 0.4 and 0.6 dB noise figures at 3 and 10 GHz.
Keywords :
1/f noise; BiCMOS integrated circuits; Ge-Si alloys; MMIC; integrated circuit design; integrated circuit noise; isolation technology; mixed analogue-digital integrated circuits; semiconductor materials; 0.18 micron; 0.4 dB; 0.6 dB; 1/f noise; 10 GHz; 120 GHz; 3 GHz; BiCMOS technology; CMOS; NPN; SiGe; broadband noise; integrated RF/analog/mixed-signal design; isolation strategies; telecommunications circuits; BiCMOS integrated circuits; Control systems; Germanium silicon alloys; Integrated circuit technology; Noise figure; Optical noise; Radio frequency; Semiconductor device noise; Signal processing; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979553
