Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology

Author

Greenberg, D. ; Sweeney, S. ; LaMothe, C. ; Jenkins, K. ; Friedman, D. ; Martin, B., Jr. ; Freeman, G. ; Ahlgren, D. ; Subbanna, S. ; Joseph, A.

Author_Institution

Microelectron. Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Noise and isolation play a crucial role in the design and integration of telecommunications circuits. This work explores noise considerations for integrated design, including NPN and CMOS broadband and 1/f noise and the efficacy of available isolation strategies. We illustrate these issues using new data from IBM´s 120 GHz, 0.18 /spl mu/m SiGe BiCMOS, featuring 0.4 and 0.6 dB noise figures at 3 and 10 GHz.

Keywords

1/f noise; BiCMOS integrated circuits; Ge-Si alloys; MMIC; integrated circuit design; integrated circuit noise; isolation technology; mixed analogue-digital integrated circuits; semiconductor materials; 0.18 micron; 0.4 dB; 0.6 dB; 1/f noise; 10 GHz; 120 GHz; 3 GHz; BiCMOS technology; CMOS; NPN; SiGe; broadband noise; integrated RF/analog/mixed-signal design; isolation strategies; telecommunications circuits; BiCMOS integrated circuits; Control systems; Germanium silicon alloys; Integrated circuit technology; Noise figure; Optical noise; Radio frequency; Semiconductor device noise; Signal processing; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979553

Filename

979553