Title :
Study of the near Si-SiO2 interface trap layer using the charge pumping technique
Author :
Maneglia, Y. ; Bauza, D.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
It is shown that the charge pumping technique allows the extraction of the Si-SiO2 interface depth trap concentration profile. This profile is found of the form Nt(x)=Nts exp(-x/d)+Nto where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained
Keywords :
electron traps; elemental semiconductors; interface states; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; Si-SiO2 interface depth trap concentration profile; charge pumping; Charge measurement; Charge pumps; Current measurement; Density measurement; Equations; Filling; Frequency; Linear predictive coding; MOS devices; MOSFETs;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651565
