DocumentCode
2167273
Title
Processing technologies for SiC
Author
Constantinidis, G.
Author_Institution
Microelectron. Res. Group, Found. for Res. & Technol. Hellas, Crete, Greece
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
161
Abstract
Processing steps such as polishing, thermal oxidation, ion implantation, ohmic contacts, Schottky contacts and patterning are key issues for the successful fabrication of SiC-power devices and high temperature devices. This paper reviews contact fabrication and patterning with the emphasis on reactive ion etching
Keywords
Schottky barriers; ion implantation; ohmic contacts; oxidation; polishing; semiconductor materials; silicon compounds; sputter etching; surface states; work function; Schottky contacts; SiC; contact fabrication; high temperature devices; ion implantation; ohmic contacts; patterning; polishing; power devices; processing technologies; reactive ion etching; thermal oxidation; Chemicals; Chemistry; Electrons; Etching; Microelectronics; Ohmic contacts; Schottky barriers; Silicon carbide; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651571
Filename
651571
Link To Document