• DocumentCode
    2167361
  • Title

    Sol-gel deposition of SnO2 on porous silicon layers investigated by RBS method

  • Author

    Craciun, G. ; Buiu, O. ; Paszti, F. ; Cobianu, C. ; Savaniu, C. ; Vasile, E.

  • Author_Institution
    Nat. Res. & Dev. Inst. for Microtechnol., Bucharest, Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    185
  • Abstract
    The pore walls of a columnar type porous silicon (PS) samples of different porosity were coated by SnO2 using the sol-gel technique. The as-anodised PS samples were characterized by Scanning Electron Microscopy (SEM) and SnO2/PS and SnO2/Si samples were characterized by Rutherford Backscattering Spectrometry (RBS). The Sn signal in RBS spectra revealed that the pores are completely filled with a good depth homogeneity. The influence of PS morphology on the tin oxide sol-gel deposition is discussed
  • Keywords
    Rutherford backscattering; porosity; scanning electron microscopy; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; RBS; SEM; Si; SnO2; SnO2 coatings; depth homogeneity; porous silicon layer substrate; sol-gel deposition; CMOS technology; Conductivity; Ethanol; Hafnium; Ion beams; Scanning electron microscopy; Scattering; Silicon; Surface morphology; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651577
  • Filename
    651577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2167361