Title :
A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications
Author :
Tessmann, A. ; Leuther, A. ; Massler, Hermann ; Lewark, U. ; Wagner, Steffen ; Weber, R. ; Kuri, M. ; Zink, M. ; Riessle, M. ; Stulz, H.-P. ; Schlechtweg, Michael ; Ambacher, Oliver ; Sommer, Rainer ; Wahlen, Alfred ; Stanko, Stephan
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high-resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm.
Keywords :
III-V semiconductors; MMIC power amplifiers; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave receivers; submillimetre wave radar; InAlAs-InGaAs; MMIC chipset; S-MMIC; amplifier circuits; compact millimeter-wave radar demonstrator; depletion-type metamorphic high electron mobility transistor; frequency 270 GHz to 325 GHz; frequency 90 GHz to 105 GHz; frequency multiplier; heterodyne receiver MMIC; high power amplifier; high-resolution submillimeter-wave radar; mHEMT technology; medium power amplifier; millimeter-wave monolithic integrated circuit; millimeter-wave receiver; millimeter-wave waveguide modules; monolithic integrated mHEMT chipset; size 100 nm; size 35 nm; Gain; MMICs; Power amplifiers; Power generation; Radar; Receivers; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659203