• DocumentCode
    2167459
  • Title

    Impurity states in a spherical quantum dot: Effect of central cell correction

  • Author

    Niculescu, Ecaterina C. ; Niculescu, Ana ; Dafinei, Adrian

  • Author_Institution
    Bucharest Univ., Romania
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    203
  • Abstract
    The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs/Ga1-xAlxAs quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied
  • Keywords
    III-V semiconductors; aluminium compounds; effective mass; gallium arsenide; impurity states; semiconductor quantum dots; Coulomb potential; GaAs-GaAlAs; central cell correction; dot radius; effective-mass approximation; impurity states; shallow donor binding energy; spherical quantum dot; variational scheme; Electrons; Gallium arsenide; Photonic band gap; Physics; Quantum dots; Semiconductivity; Semiconductor impurities; Stationary state; US Department of Transportation; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651580
  • Filename
    651580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2167459