Physico-chemical properties and electrophysical characteristics of niobium nitride-gallium arsenide heterostructures

Author

Belyaev, A.A. ; Hotovy, I. ; Kashin, G.N. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Tkhorik, Yu.A. ; Venger, E.F.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

207

Abstract

For niobium nitride-gallium arsenide heterostructures the effect of interaction between phases on the contact electrophysical characteristics was studied. If was found that the characteristics depended nonmonotonically on both nitrogen percentage in the working gas mixture and annealing temperature. This may be related to compositional and structural nonuniformities of the interface

Keywords

Auger effect; III-V semiconductors; Schottky barriers; X-ray photoelectron spectra; annealing; gallium arsenide; interface structure; niobium compounds; semiconductor-metal boundaries; AES; NbN-GaAs; Schottky contacts; annealing temperature; compositional nonuniformities; heterostructures; photoelectron spectra; structural nonuniformities; Chemicals; Chemistry; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Niobium compounds; Physics; Substrates; Surface morphology; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651581

Filename

651581