DocumentCode
2167502
Title
On the average-gap model in amorphous materials
Author
Tomozeiu, Nicolae
Author_Institution
Fac. of Phys., Bucharest Univ., Romania
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
211
Abstract
The dispersion of the subband refractive index in amorphous semiconductors is well described by “average gap” model which is based on two-band model of optical transitions. The disorder potentials due to the “electrostatic” and “elastic” forces determine the variation of the conduction-and valence-band edges. The average gap is defined as the difference between the most probable values of the bottom of the conduction band and the top of the valence band. The model is applied on a-Si1-xCx:H, a-C:H and a-SiOxNy layers
Keywords
amorphous semiconductors; conduction bands; refractive index; valence bands; C:H; SiC:H; SiON; amorphous semiconductors; average-gap model; conduction band; disorder potentials; elastic forces; electrostatic forces; optical transitions; subband refractive index; two-band model; valence band edges; Absorption; Amorphous materials; Amorphous semiconductors; Density measurement; Electrostatics; Optical refraction; Optical variables control; Photonic band gap; Physics; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651582
Filename
651582
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