Title :
A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process
Author :
Po-Yi Wu ; Buckwalter, James F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
A three-stage dual-band power amplifier is demonstrated in 0.12 um silicon germanium (SiGe) BiCMOS process at both Q-band and W-band. The first two stages are pseudo-differential pre-amplifiers with a high-impedance dual-band load. The final stage is a single-ended power amplifier with an appropriate impedance to produce output power. The collector-emitter junction breakdown voltage of the amplifier is extended with a low-impedance base current biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 15% with 14 dBm maximum saturated power (Psat) at 43 GHz and 9 dBm Psat at 82 GHz. The effective chip area is 1mm2 including input and output RF GSG pads.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; differential amplifiers; millimetre wave power amplifiers; BiCMOS process; Q-band/W-band dual-band power amplifier; RF GSG pads; SiGe; breakdown voltage; collector-emitter junction; frequency 43 GHz; frequency 82 GHz; high-impedance dual-band load; low-impedance base current biasing network; peak power-added efficiency; pseudodifferential pre-amplifiers; single-ended power amplifier; size 0.12 mum; three-stage dual-band power amplifier; BiCMOS integrated circuits; Dual band; Gain; Impedance; Power generation; Silicon germanium; Transmission line measurements;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659206
