Title :
The intrinsic pseudo-MOSFET technique
Author :
Ionescu, A.M. ; Munteanu, D. ; Chovet, A. ; Rusu, A. ; Steriu, D.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the 2-point and the 4-point methods is also presented
Keywords :
MOSFET; electrical resistivity; elemental semiconductors; silicon; silicon compounds; silicon-on-insulator; 2-point methods; 4-point methods; 4-point probe method; SOI wafer fabrication; SOI wafers; Si-SiO2; electrical parameter determination; in situ electrical characterization; intrinsic pseudo-MOSFET electrical characterization method; intrinsic pseudo-MOSFET technique; material evaluation; Contact resistance; Current measurement; Electrical resistance measurement; Fabrication; Force measurement; MOSFET circuits; Probes; Q measurement; Substrates; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651583
