Spin-on dopants as lifetime modifier sources in fast recovery epitaxial diodes processing

Author

Veron, Adrian ; Ohanisian, Madalina ; Ciocea, Dumitru ; Mitroi, Cristian

Author_Institution

Baneasa SA, Bucharest, Romania

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

225

Abstract

The paper presents the results of an experimental study dedicated to lifetime control in fast recovery epitaxial diodes (FRED) by gold and platinum diffusion from spin-on sources. The main diode parameters, namely reverse recovery time, forward voltage drop and leakage current (especially at high temperatures) are comparatively analyzed. It is shown that platinum and gold offer a different trade-off between these parameters. The final choice of the lifetime modifier is determined by the intended diodes applications

Keywords

elemental semiconductors; gold; leakage currents; p-i-n diodes; platinum; semiconductor doping; semiconductor epitaxial layers; silicon; FRED; Si:Au; Si:Pt; diffusion; diode parameters; fast recovery epitaxial diodes; forward voltage drop; gold; leakage current; lifetime control; lifetime modifier; lifetime modifier sources; p-i-n diodes; platinum; reverse recovery time; spin-on dopants; Boron; Doping; Gold; Impurities; Leakage current; P-i-n diodes; Plasma temperature; Platinum; Silicon; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651585

Filename

651585