A Total Bandwidth Expanded Dual-Band GaN Doherty PA toward the LTE-A Carrier Aggregation Application

Author

Hayakawa, Mana ; Shiikuma, Kazumi ; Kaneko, Tetsuya

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a new theoretical concept, design implementation and experimental results of a compact dual-band GaN-HEMT Doherty power amplifier (DPA) with broad bandwidths. Measured results well agree with simulation. Small signal 3 dB bandwidths at 700 MHz band and 2.1 GHz band are 300MHz and 450 MHz, respectively. Total bandwidth of 750 MHz which covers the IM3 bandwidth of LTE-A signal is achieved. Drain efficiency at 6 dB back off exceeds 43% over 100 MHz bandwidths at both bands. The fabricated dual-band DPA is 135 × 65 mm².

Keywords

III-V semiconductors; Long Term Evolution; UHF field effect transistors; UHF power amplifiers; VHF amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; DPA; GaN; IM3 bandwidth; LTE-A carrier aggregation application; bandwidth 100 MHz; bandwidth 300 MHz; bandwidth 450 MHz; bandwidth 750 MHz; drain efficiency; frequency 2.1 GHz; frequency 700 MHz; gain 3 dB; gain 6 dB; total bandwidth expanded dual-band GaN-HEMT Doherty power amplifier; Bandwidth; Dual band; Frequency measurement; Gain; Impedance; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659208

Filename

6659208