Fractal behaviour of in situ heat treated metal-compound semiconductor structures

During device preparation, the metal-compound semiconductor junction endures several heat stresses. Due to the heat stress (or intentional heat treatment) material interdiffusion takes place between the layers. The material transport causes inhomogeneities both laterally and perpendicularly to the surface. The aim of this study: (a) to show that the lateral inhomogeneity of heat treated multilayer metal-compound semiconductor surfaces have fractal character at special temperatures, as it was demonstrated previously for single layer metallisations; (b) to propose a method applicable to determine the fractal dimension of the investigated surface