Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550°C

Author

Cobianu, C. ; Cosmin, P. ; Modreanu, M. ; Dascalu, D. ; Holleman, J.

Author_Institution

Inst. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

235

Abstract

In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH₄ at low temperatures in the range of 500-550°C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition

Keywords

chemical vapour deposition; elemental semiconductors; reaction kinetics theory; reaction rate constants; semiconductor growth; semiconductor thin films; silicon; surface chemistry; 20 to 100 Pa; 500 to 550 C; 6 to 60 mm; LPCVD; LPCVD silicon films; Si; SiH₄; film deposition; gas phase reactions; growth rate; kinetic constants; low pressure chemical vapor deposition; plug flow model; surface reactions; undoped silicon films; Hydrogen; Inductors; Kinetic theory; Plugs; Polymer films; Radio access networks; Semiconductor device modeling; Semiconductor films; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651587

Filename

651587