Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results

Author

Gaiseanu, F. ; Tsoukalas, D. ; Esteve, J. ; Postolache, C. ; Goustouridis, D. ; Tsoi, E.

Author_Institution

Nat. Inst. of Res.-Dev. for Microtechnol., Bucharest, Romania

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

247

Abstract

The authors present an analytical model including the influence of the highly-doped silicon layer and of the intrinsic boron diffusion region on the chemical etching rate and on the chemical etching time, allowing one to control the self-limitation chemical etching process to obtain silicon micromechanical elements

Keywords

boron; diffusion; elemental semiconductors; etching; heavily doped semiconductors; micromachining; reaction rate constants; semiconductor process modelling; silicon; surface chemistry; Si:B; boron diffusion; chemical etching control; chemical etching rate; chemical etching time; highly-doped silicon layer; intrinsic boron diffusion region; micromechanical elements; self-limitation chemical etching process; self-limitation process; silicon; Boron; Chemical analysis; Chemical elements; Chemical processes; Doping profiles; Etching; Semiconductor process modeling; Silicon; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651590

Filename

651590