Sulfur passivation for photosensitivity control of detectors with corrugated metal-III-V semiconductor interface

Author

Dmitruk, N.L. ; Mayeva, O.I. ; Mamikin, S.V. ; Yastrubchak, O.B.

Author_Institution

Inst. for Phys. of Semicond., Acad. of Sci., Kyiv, Ukraine

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

263

Abstract

We report on a sulfur based surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity are used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in the surface plasmon polariton excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating

Keywords

III-V semiconductors; Schottky diodes; metal-semiconductor-metal structures; passivation; photodetectors; polaritons; sulphur; surface plasmons; 3 y; MSM detectors; S; Schottky diodes; corrugated interface; corrugated metal-III-V semiconductor interface; detectors; dielectric coating; diodes; photodetectors; photosensitivity control; polarization characteristics; spectral characteristics; sulfur based surface passivation method; sulfur passivation; surface plasmon polariton excitation regime; visible spectrum; Corrugated surfaces; Detectors; Dielectrics; Diodes; Monitoring; Passivation; Photodetectors; Plasmons; Polarization; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651594

Filename

651594