Title :
Zinc diffusion from a reactively sputtered glass source in GaAs
Author :
Jishiashvili, David ; Shiolashvili, Zeinab ; Dzanelidze, Rusudan ; Mosidze, Leila
Author_Institution :
Inst. of Cybern., Acad. of Sci., Tbilisi, Georgia
Abstract :
A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700°C. The developed original technology simplifies the diffusion process, allows to the perform doping procedure in open tubes and inert atmospheres without encapsulation. The surface concentration can be regulated in the wide range from 1016 to 1020 cm-3
Keywords :
III-V semiconductors; diffusion; doping profiles; gallium arsenide; semiconductor doping; surface structure; zinc; 470 to 700 C; GaAs; GaAs:Zn; Zn diffusion; doping procedure; inert atmospheres; low temperature reactive ion-plasma sputtering technique; open tubes; reactively sputtered glass source; surface concentration; zinc diffusion source; zinc silicate glass; Annealing; Etching; Gallium arsenide; Glass; Ion implantation; Plasma temperature; Semiconductor device doping; Semiconductor films; Sputtering; Zinc;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651598
