Electrical behavior of 6H-SiC pn diodes

Author

Badila, M. ; Brezeanu, G. ; Tudor, B. ; Bica, G. ; Lungu, P. ; Millan, J. ; Godignon, P. ; Locatelli, Marie-Laure ; Chante, J.P.

Author_Institution

Nat. Inst. for Microtechnol., Bucharest, Romania

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

285

Abstract

The electrical I-V, C-V characteristics of 6H-SiC epitaxial pn diodes are measured and analyzed. The devices are fabricated in a simple technology, using a single epilayer. The measured breakdown voltage of about 200 V is in good agreement with the calculated value. The saturation currents, I_od=3.67×10^-51 A, I_cr=5.6×10^-24 A, and the equivalent ionized impurities concentration, N_aq=1.4×10¹⁷ cm ^-3, are obtained by optimal extraction

Keywords

capacitance; electric breakdown; impurity states; interface states; semiconductor diodes; silicon compounds; wide band gap semiconductors; 200 V; 6H-SiC pn diodes; C-V characteristics; I-V characteristics; SiC; breakdown voltage; electrical behavior; ionized impurities concentration; optimal extraction; saturation currents; single epilayer; Capacitance-voltage characteristics; Chemical technology; Parasitic capacitance; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651599

Filename

651599