DocumentCode :
2167929
Title :
Electrical behavior of 6H-SiC pn diodes
Author :
Badila, M. ; Brezeanu, G. ; Tudor, B. ; Bica, G. ; Lungu, P. ; Millan, J. ; Godignon, P. ; Locatelli, Marie-Laure ; Chante, J.P.
Author_Institution :
Nat. Inst. for Microtechnol., Bucharest, Romania
Volume :
1
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
285
Abstract :
The electrical I-V, C-V characteristics of 6H-SiC epitaxial pn diodes are measured and analyzed. The devices are fabricated in a simple technology, using a single epilayer. The measured breakdown voltage of about 200 V is in good agreement with the calculated value. The saturation currents, Iod=3.67×10-51 A, Icr=5.6×10-24 A, and the equivalent ionized impurities concentration, Naq=1.4×1017 cm -3, are obtained by optimal extraction
Keywords :
capacitance; electric breakdown; impurity states; interface states; semiconductor diodes; silicon compounds; wide band gap semiconductors; 200 V; 6H-SiC pn diodes; C-V characteristics; I-V characteristics; SiC; breakdown voltage; electrical behavior; ionized impurities concentration; optimal extraction; saturation currents; single epilayer; Capacitance-voltage characteristics; Chemical technology; Parasitic capacitance; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651599
Filename :
651599
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2167929
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