Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET´s

Author

Onishi, K. ; Chang Seok Kang ; Rino Choi ; Hag-ju Cho ; Gopalan, S. ; Nieh, R. ; Dharmarajan, E. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

The performance of polysilicon gate HfO/sub 2/ MOSFET´s is discussed in terms of gate leakage current and the effects of NH/sub 3/ surface nitridation on boron penetration and carrier mobility. Negative bias temperature instability (NBTI) on HfO/sub 2/ PMOSFET´s was evaluated for the first time. Although surface nitridation enhanced NBTI degradation, HfO/sub 2/ PMOSFET´s without nitridation show sufficient NBTI immunity.

Keywords

MOSFET; carrier mobility; dielectric thin films; hafnium compounds; leakage currents; nitridation; semiconductor device breakdown; semiconductor device reliability; silicon; NBTI degradation; NH/sub 3/; NH/sub 3/ surface nitridation; Si-HfO/sub 2/; boron penetration; carrier mobility; gate leakage current; high-k gate dielectrics; negative bias temperature instability; polysilicon gate HfO/sub 2/ MOSFET; reliability characteristics; time dependent dielectric breakdown; Annealing; Boron; Hafnium oxide; High-K gate dielectrics; Leakage current; MOSFET circuits; Niobium compounds; Silicon; Tin; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979594

Filename

979594