Title :
Experimental results on epitaxial-emitter and implanted-emitter high voltage silicon carbide diodes
Author :
Locatelli, M.L. ; Planson, D. ; Ortolland, S. ; Lanois, F. ; Chante, J.P.
Author_Institution :
INSA, CNRS, Villeurbanne, France
Abstract :
Experimental results of reverse electrical characteristics of high voltage bipolar diodes are reported. Junction diameter, environment, and techniques for junction creation and periphery protection influences on breakdown are investigated. These results on mesa and planar structures are representative of the main current difficulties for reproducible realisation of SiC high power devices
Keywords :
electric breakdown; semiconductor diodes; silicon compounds; wide band gap semiconductors; SiC; SiC high power devices; breakdown; epitaxial-emitter; high voltage bipolar diodes; implanted-emitter high voltage silicon carbide diodes; junction diameter; mesa structures; planar structures; reverse electrical characteristics; Aluminum; Breakdown voltage; Doping; Electric breakdown; Electric variables; Leakage current; Semiconductor diodes; Silicon carbide; Sputter etching; Thermal conductivity;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651600
