Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET

Author

Yamaguchi, T. ; Satake, H. ; Fukushima, N.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Zr-silicate thin films with different Zr concentrations, fabricated by low impact pulsed laser ablation deposition, have identically thin interface layers and smooth Si interfaces. By using these Zr-silicate samples, the influence of Si interface properties and that of bulk charges in the Zr-silicate on current drivability were distinguished for the first time. It was found that bulk charges in the Zr-silicate dielectrics greatly affect the current drivability of MISFETs, even if the interface-state density is small.

Keywords

MISFET; X-ray photoelectron spectra; carrier mobility; dielectric thin films; interface states; pulsed laser deposition; semiconductor device reliability; zirconium compounds; Si interface properties; TiN-ZrSiO/sub 4/-Si; Zr concentration increase; Zr-silicate thin films; ZrSiO/sub 4/ MISFET; angle resolved XPS spectra; bulk charges; current drivability degradation; effective mobility; high-k gate dielectrics; identically thin interface layers; interface-state density; low impact pulsed laser ablation deposition; smooth Si interfaces; Capacitance; Ceramics; Degradation; High K dielectric materials; High-K gate dielectrics; MISFETs; Optical pulses; Pulsed laser deposition; Semiconductor films; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979595

Filename

979595