Title :
High quality CVD TaN gate electrode for sub-100 nm MOS devices
Author :
Kim, Y.H. ; Lee, C.H. ; Jeon, T.S. ; Bai, W.P. ; Choi, C.H. ; Lee, S.J. ; Xinjian, L. ; Clarks, R. ; Roberts, D. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, for the first time, we present a detailed evaluation of physical and electrical properties of CVD TaN as a potential gate electrode material for sub-100 nm MOS device applications. Our results show that CVD TaN films deposited using TBTDET (tertbutylimidoirisdiethylamido tantalum) exhibit excellent thermal stability with underlying ultra thin SiO/sub 2/ up to 1000/spl deg/C and extremely stable work function (5eV@800-1000/spl deg/C) suitable for p-MOS device applications. Compared to PVD TaN, MOS devices with CVD TaN gate electrode show desirable work function for p-MOS devices, excellent stability of gate oxide thickness, leakage current, and interface properties during high-temperature annealing, and superior gate dielectric TDDB reliability. These results suggest that CVD TaN can be used as the gate electrode on ultra thin gate oxide in self-aligned gate-first CMOS processing.
Keywords :
CMOS integrated circuits; CVD coatings; MOS capacitors; annealing; electrodes; interface states; leakage currents; semiconductor device metallisation; semiconductor device reliability; tantalum compounds; thermal stability; work function; 2500 A; 800 to 1000 C; CVD TaN gate electrode; LOCOS isolated MOS capacitors; TBTDET; TaN-SiO/sub 2/; electrical properties; gate dielectric TDDB reliability; gate oxide thickness stability; high temperature annealing; interface properties; leakage current; p-MOS device applications; physical properties; self-aligned gate-first CMOS processing; stable work function; sub-100 nm MOS devices; tertbutylimidotrisdiethylamido tantalum; thermal stability; underlying ultra thin SiO/sub 2/; Annealing; Atherosclerosis; Atomic force microscopy; CMOS process; Dielectric devices; Electrodes; MOS devices; Plasma temperature; Scanning electron microscopy; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979596
