DocumentCode
2168028
Title
Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters
Author
Tenbroek, B.M. ; Redman-White, W. ; Lee, M.S.L. ; Bunyan, R.J.T. ; Uren, M.J.
Author_Institution
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fYear
1997
fDate
6-9 Oct 1997
Firstpage
114
Lastpage
115
Abstract
The study presented here provides valuable insight into the variation of thermal resistances and capacitances with SOI MOSFET device geometry. It demonstrates that small-signal measurements are a powerful technique for investigating heat flow paths in MOSFETs. An empirical approach is presented that allows estimation of dynamic thermal parameters directly from device geometries, based on a limited set of measurements
Keywords
MOSFET; capacitance; silicon-on-insulator; thermal resistance; SOI MOSFET; capacitance; dynamic thermal parameters; geometry dependence; heat flow; small-signal measurements; thermal resistance; Capacitance; Electrical resistance measurement; Geometry; Interpolation; MOSFET circuits; Semiconductor device modeling; Semiconductor films; Silicon; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location
Fish Camp, CA
ISSN
1078-621X
Print_ISBN
0-7803-3938-X
Type
conf
DOI
10.1109/SOI.1997.634959
Filename
634959
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