• DocumentCode
    2168059
  • Title

    0.2 dB Gain Ripple - 20W- WCDMA Silicon MMIC

  • Author

    Bouisse, Gerard

  • Author_Institution
    Motorola SPS-avenue du general Eisenhower-31000 Toulouse-France
  • fYear
    2001
  • fDate
    24-26 Sept. 2001
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The Silicon MMICs have entered the wireless base station arena a few years ago, because of their good and reliable power performances together with excellent thermal properties. The WCDMA base station manufacturers require amplifiers with very stringent gain flatness specification, because of the UMTS linearity specifications, the multi carrier amplification and the associated linearity enhancement techniques. This paper describes the different technical problems inherent to very flat gain multistage power amplifiers, the techniques used to circumvent them, and presents the performances of a 3 stages 20W peak power amplifier featuring 0.2dB gain ripple within 5 times the UMTS band (300 MHz).
  • Keywords
    3G mobile communication; Bandwidth; Frequency; Impedance; MMICs; Multiaccess communication; Performance gain; Power amplifiers; Power generation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2001. 31st European
  • Conference_Location
    London, England
  • Type

    conf

  • DOI
    10.1109/EUMA.2001.338895
  • Filename
    4140268