DocumentCode
2168125
Title
High speed packaged electroabsorption modulators for optical communications
Author
Bond, Aaron E. ; Shtengel, Gleb ; Singh, Prashant ; Akulova, Yuliya ; Reynolds, C.L.
Author_Institution
Lucent Technol. Bell Labs., Breinigsville, PA, USA
fYear
2000
fDate
2000
Firstpage
469
Lastpage
473
Abstract
High speed packaged electroabsorption modulators are fabricated from the InGaAsP material system with integrated mode converters. The packaged devices exhibit 43 GHz modulation bandwidth, -10 dB electrical return loss, and 10 dB extinction for 2Vp-p. Device design and package considerations for high speed devices is presented
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; semiconductor device packaging; -10 dB; 2 V; 43 GHz; InGaAsP; electrical return loss; electroabsorption modulator; extinction ratio; high speed device; integrated mode converter; modulation bandwidth; optical communication; packaging; Absorption; Bandwidth; Extinction ratio; High speed optical techniques; Optical losses; Optical materials; Optical modulation; Optical transmitters; Packaging; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location
Las Vegas, NV
Print_ISBN
0-7803-5908-9
Type
conf
DOI
10.1109/ECTC.2000.853198
Filename
853198
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