Title :
High speed packaged electroabsorption modulators for optical communications
Author :
Bond, Aaron E. ; Shtengel, Gleb ; Singh, Prashant ; Akulova, Yuliya ; Reynolds, C.L.
Author_Institution :
Lucent Technol. Bell Labs., Breinigsville, PA, USA
Abstract :
High speed packaged electroabsorption modulators are fabricated from the InGaAsP material system with integrated mode converters. The packaged devices exhibit 43 GHz modulation bandwidth, -10 dB electrical return loss, and 10 dB extinction for 2Vp-p. Device design and package considerations for high speed devices is presented
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; semiconductor device packaging; -10 dB; 2 V; 43 GHz; InGaAsP; electrical return loss; electroabsorption modulator; extinction ratio; high speed device; integrated mode converter; modulation bandwidth; optical communication; packaging; Absorption; Bandwidth; Extinction ratio; High speed optical techniques; Optical losses; Optical materials; Optical modulation; Optical transmitters; Packaging; Quantum well devices;
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
DOI :
10.1109/ECTC.2000.853198
