• DocumentCode
    2168174
  • Title

    GaN C-Band HPA for Phased-Array Applications

  • Author

    van Wanum, M. ; de Hek, A.P. ; van Vliet, Frank E.

  • Author_Institution
    TNO, The Hague, Netherlands
  • fYear
    2013
  • fDate
    13-16 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the UMS GH25-10 GaN MMIC technology a C-band high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such as weather radar, a large bandwidth is required. A design bandwidth from 5 to 6 GHz has been used. Simulation and measurement data from on-wafer and mounted samples will be shown. Showing more than 50 W output power with 45% efficiency the HPA shows sufficient performance to be used in a module for state-of-the-art active electronically scanned arrays. The measured output power and efficiency are a record for MMIC amplifiers.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium compounds; phased array radar; spaceborne radar; C-band HPA; GaN; MMIC amplifier; MMIC technology; active electronically scanned arra; bandwidth 100 MHz; efficiency 45 percent; frequency 5 GHz to 6 GHz; high power amplifier; phased array application; space based SAR system; Gallium nitride; Logic gates; MMICs; Power generation; Radar; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2013.6659229
  • Filename
    6659229