DocumentCode :
2168210
Title :
Effective on-current of MOSFETs for large-signal speed consideration
Author :
Ng, K.K. ; Rafferty, C.S. ; Hong-Ih Cong
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
fYear :
2001
fDate :
2-5 Dec. 2001
Abstract :
To gauge the speed capability of a MOSFET, the maximum saturation on-current is usually quoted as an important parameter. Although the effect of the linear characteristics has been known to be important, it is the purpose of this paper to provide an analytical and a quantitative answer, using a simple circuit analysis. The results show that the charging/discharging time in the linear region is not small, and consequently that the drain saturation voltage to reach the saturation current is a critical parameter. A new parameter "effective on-current" is proposed which captures the linear characteristics in addition to the saturation current, and should be more indicative of the large-signal speed capability in digital circuits. Finally, the impacts of series resistance are also examined.
Keywords :
MOSFET; equivalent circuits; normalising; semiconductor device models; MOSFETs; charging/discharging time; circuit analysis; drain saturation voltage; effective on-current; large-signal speed consideration; linear characteristics; saturation current; series resistance; Circuit analysis; Digital circuits; Equations; Leg; MOSFETs; Q factor; Ring oscillators; Threshold voltage; Transconductance; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
Type :
conf
DOI :
10.1109/IEDM.2001.979605
Filename :
979605
Link To Document :
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