Effective on-current of MOSFETs for large-signal speed consideration

Author

Ng, K.K. ; Rafferty, C.S. ; Hong-Ih Cong

Author_Institution

Agere Syst., Murray Hill, NJ, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

To gauge the speed capability of a MOSFET, the maximum saturation on-current is usually quoted as an important parameter. Although the effect of the linear characteristics has been known to be important, it is the purpose of this paper to provide an analytical and a quantitative answer, using a simple circuit analysis. The results show that the charging/discharging time in the linear region is not small, and consequently that the drain saturation voltage to reach the saturation current is a critical parameter. A new parameter "effective on-current" is proposed which captures the linear characteristics in addition to the saturation current, and should be more indicative of the large-signal speed capability in digital circuits. Finally, the impacts of series resistance are also examined.

Keywords

MOSFET; equivalent circuits; normalising; semiconductor device models; MOSFETs; charging/discharging time; circuit analysis; drain saturation voltage; effective on-current; large-signal speed consideration; linear characteristics; saturation current; series resistance; Circuit analysis; Digital circuits; Equations; Leg; MOSFETs; Q factor; Ring oscillators; Threshold voltage; Transconductance; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979605

Filename

979605