DocumentCode :
2168220
Title :
GaN Transistors - The Best Emerging Technology for Power Conversion from DC through RF
Author :
Lidow, A.
Author_Institution :
Efficient Power Conversion Corp., El Segundo, CA, USA
fYear :
2013
fDate :
13-16 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
It has been three years since the first gallium nitride transistors were delivered as power MOSFET replacements in a commercial power conversion application. Since that time there has been major interest, and rapid progress in the development and commercialization of this new technology. In this paper we will give an update on GaN technology, its performance compared with power MOSFETs and LDMOS RF transistors, as well as the status of "early adopters" in the world of power conversion.
Keywords :
III-V semiconductors; gallium compounds; power MOSFET; power convertors; wide band gap semiconductors; GaN; LDMOS RF transistor; power MOSFET; power conversion application; Gallium nitride; MOSFET; Power amplifiers; Radio frequency; Silicon; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/CSICS.2013.6659230
Filename :
6659230
Link To Document :
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