Title :
Thermoelectric materials of p and n type from the (Bi,Sb,Te) phase diagram
Author :
Scherrer, H. ; Martin-Lopez, R. ; Lenoir, B. ; Dauscher, A. ; Scherrer, S.
Author_Institution :
Lab. de Phys. des Materiaux, Ecole des Mines, Nancy
Abstract :
It seems that the lower figure of merit for sintered n type telluride compounds is due to the selenium segregation at the grain boundaries. We present the transport properties of the Bi2Te 3 and Sb2Te3 binary compounds in terms of stoichiometric deviation. We discuss these properties along the pseudo-binary phase diagram to determine the domain of existence of Bi 2Te3-Sb2Te3 solid solutions. The study of the (Bi,Sb,Te) phase diagram allowed us to identify a zone where n-type materials can be obtained
Keywords :
antimony compounds; bismuth compounds; carrier density; grain boundary segregation; phase diagrams; semiconductor materials; solid solutions; thermoelectricity; (Bi,Sb,Te) phase diagram; Bi2Te3; Bi2Te3-Sb2Te3; Bi2Te3-Sb2Te3 solid solution; Sb2Te3; figure of merit; grain boundaries; pseudo-binary phase diagram; selenium segregation; sintered n type telluride compounds; stoichiometric deviation; thermoelectric materials; transport properties; Bismuth; Crystalline materials; Crystals; Grain boundaries; Inorganic materials; Powders; Semiconductor materials; Solids; Tellurium; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979606
