DocumentCode
2168261
Title
Analytical model for failure rate prediction due to anomalous charge loss of flash memories
Author
Degraeve, R. ; Schuler, F. ; Lorenzini, M. ; Wellekens, D. ; Hendrickx, P. ; Van Houdt, J. ; Haspeslagh, L. ; Groeseneken, G. ; Tempel, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Anomalous charge loss in flash memories is modeled with a percolation concept. An analytical model is constructed that relates the charge loss distribution of moving bits in flash memories with the geometric distribution of oxide traps, thus linking the phenomenological description of moving bits to physical conduction models. This model allows flash memory failure rate predictions for different oxide qualities and thicknesses.
Keywords
failure analysis; flash memories; integrated circuit modelling; integrated circuit reliability; percolation; analytical model; anomalous charge loss; charge loss distribution; failure rate prediction; flash memories; geometric distribution; oxide qualities; oxide thicknesses; percolation concept; phenomenological description; physical conduction models; Analytical models; Electron traps; Flash memory; Joining processes; Leakage current; Predictive models; Solid modeling; Stress; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979607
Filename
979607
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