Title :
Analytical model for failure rate prediction due to anomalous charge loss of flash memories
Author :
Degraeve, R. ; Schuler, F. ; Lorenzini, M. ; Wellekens, D. ; Hendrickx, P. ; Van Houdt, J. ; Haspeslagh, L. ; Groeseneken, G. ; Tempel, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Anomalous charge loss in flash memories is modeled with a percolation concept. An analytical model is constructed that relates the charge loss distribution of moving bits in flash memories with the geometric distribution of oxide traps, thus linking the phenomenological description of moving bits to physical conduction models. This model allows flash memory failure rate predictions for different oxide qualities and thicknesses.
Keywords :
failure analysis; flash memories; integrated circuit modelling; integrated circuit reliability; percolation; analytical model; anomalous charge loss; charge loss distribution; failure rate prediction; flash memories; geometric distribution; oxide qualities; oxide thicknesses; percolation concept; phenomenological description; physical conduction models; Analytical models; Electron traps; Flash memory; Joining processes; Leakage current; Predictive models; Solid modeling; Stress; Testing; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979607
